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SIZ300DT-T1-GE3 Datenblatt(Datasheet) 2 Page - Vishay Siliconix

Teile-Nr. SIZ300DT-T1-GE3
Beschreibung  Dual N-Channel 30 V (D-S) MOSFETs
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Hersteller  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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Document Number: 67715
S11-1646-Rev. B, 15-Aug-11
Vishay Siliconix
SiZ300DT
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2.
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
 300 µs, duty cycle  2 %.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Channel-2
Unit
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambienta, b
t
 10 s
RthJA
27
34
24
30
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
67.5
3.24
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 µA
Ch-1
30
V
VGS = 0 V, ID = 250 µA
Ch-2
30
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
Ch-1
24
mV/°C
ID = 250 µA
Ch-2
30
VGS(th) Temperature Coefficient
V
GS(th)/TJ
ID = 250 µA
Ch-1
- 4.1
ID = 250 µA
Ch-2
- 5
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Ch-1
1
2.4
V
VDS = VGS, ID = 250 µA
Ch-2
1
2.2
Gate Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Ch-1
± 100
nA
Ch-2
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Ch-1
1
µA
VDS = 30 V, VGS = 0 V
Ch-2
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-1
5
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-2
5
On-State Drain Currentb
ID(on)
VDS 5 V, VGS = 10 V
Ch-1
10
A
VDS 5 V, VGS = 10 V
Ch-2
10
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 9.8 A
Ch-1
0.0200 0.0240
VGS = 10 V, ID = 15 A
Ch-2
0.0090 0.0110
VGS = 4.5 V, ID = 8.5 A
Ch-1
0.0265 0.0320
VGS = 4.5 V, ID = 12 A
Ch-2
0.0135 0.0165
Forward Transconductanceb
gfs
VDS = 15 V, ID = 9.8 A
Ch-1
30
S
VDS = 15 V, ID = 15 A
Ch-2
30
Dynamica
Input Capacitance
Ciss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Ch-1
400
pF
Ch-2
730
Output Capacitance
Coss
Ch-1
125
Ch-2
155
Reverse Transfer Capacitance
Crss
Ch-1
25
Ch-2
65
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 9.8 A
Ch-1
7.4
12
nC
VDS = 15 V, VGS = 10 V, ID = 15 A
Ch-2
14.2
22
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 9.8 A
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 15 A
Ch-1
3.5
5.3
Ch-2
6.8
11
Gate-Source Charge
Qgs
Ch-1
1.5
Ch-2
2.2
Gate-Drain Charge
Qgd
Ch-1
1.1
Ch-2
2.3
Gate Resistance
Rg
f = 1 MHz
Ch-1
0.5
2.6
5.2
Ch-2
0.5
2.6
5.2




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