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SIZ702DT Datenblatt(PDF) 9 Page - Vishay Siliconix |
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SIZ702DT Datenblatt(HTML) 9 Page - Vishay Siliconix |
9 / 12 page Document Number: 65525 S09-2266-Rev. A, 02-Nov-09 www.vishay.com 9 Vishay Siliconix SiZ702DT New Product CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C TJ = 150 °C VSD -Source-to-Drain Voltage (V) 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.000 0.005 0.010 0.015 0.020 0.025 0.030 02 4 6 8 10 ID =13.8 A TJ = 25 °C TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 10 20 30 40 50 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 100 ms Limited byRDS(on)* BVDSS Limited 1ms 100 µs 10 ms DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1s,10s |
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