SIZ704DT-T1-GE3 datasheet(10/12 Pages) VISHAY

Teilenummer	SIZ704DT-T1-GE3

Bauteilbeschribung	N-Channel 30-V (D-S) MOSFETs

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Document Number: 65367

S09-1921-Rev. A, 28-Sep-09

Vishay Siliconix

SiZ704DT

New Product

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

10

20

30

40

0

25

50

75

100

125

150

Package Limited

TC - Case Temperature (°C)

Power, Junction-to-Case

0

5

10

15

20

25

30

25

50

75

100

125

150

TC - Case Temperature (°C)

Ähnliche Beschreibung - SIZ704DT-T1-GE3

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Vishay Siliconix	SIZ730DT	211Kb / 14P	N-Channel 30 V (D-S) MOSFETs Rev. B, 28-Nov-11
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	SIZ702DT	195Kb / 14P	N-Channel 30 V (D-S) MOSFETs 01-Jan-2022
Vishay Telefunken	SIZ730DT	211Kb / 14P	N-Channel 30 V (D-S) MOSFETs
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Vishay Siliconix	SIZ300DT	330Kb / 14P	Dual N-Channel 30 V (D-S) MOSFETs Rev. D, 11-Jun-12

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