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SIZ710DT Datenblatt(Datasheet) 10 Page - Vishay Siliconix

Teile-Nr. SIZ710DT
Beschreibung  N-Channel 20 V (D-S) MOSFETs
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Hersteller  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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Document Number: 65733
S10-2248-Rev. A, 04-Oct-10
Vishay Siliconix
SiZ710DT
New Product
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
20
40
60
80
100
120
0
255075
100
125
150
Package Limited
TC - Case Temperature (°C)
Power, Junction-to-Case
0
10
20
30
40
50
25
50
75
100
125
150
TC - Case Temperature (°C)




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