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SIZ710DT-T1-GE3 Datenblatt(PDF) 7 Page - Vishay Siliconix |
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SIZ710DT-T1-GE3 Datenblatt(HTML) 7 Page - Vishay Siliconix |
7 / 14 page Document Number: 65733 S10-2248-Rev. A, 04-Oct-10 www.vishay.com 7 Vishay Siliconix SiZ710DT New Product CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 1000 10-1 10-4 100 0.2 0.1 Square Wave Pulse Duration (s) 1 0.1 0.01 t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 67 °C/W 3. TJM -TA =PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Case 1 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) 10-3 10-2 10-1 10-4 0.02 Single Pulse 0.1 0.2 0.05 |
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