Datenblatt-Suchmaschine für elektronische Bauteile |
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SMA6J5.0A-E3-61 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SMA6J5.0A-E3-61 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 5 page New Product SMA6J5.0A thru SMA6J28A Vishay General Semiconductor Document Number: 89115 Revision: 30-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Note: (1) Mounted on minimum recommended pad layout RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to ambient (1) RθJA 120 °C/W Typical thermal resistance, junction to lead RθJL 25 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMA6J5.0A-E3/61 0.064 61 1800 7" diameter plastic tape and reel SMA6J5.0A-E3/5A 0.064 5A 7500 13" diameter plastic tape and reel Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Power or Current vs. Initial Junction Temperature Pulse Width (µs) - ½ IPP Exponential Waveform 100 1 0.1 0.1 10 10 000 10 1 100 1000 TJ - Initial Temperature 100 50 0 075 200 75 25 100 150 25 50 125 175 Figure 3. Pulse Waveform Figure 4. Typical Junction Capacitance t - Time (ms) 150 50 0 0 2.0 4.0 100 1.0 3.0 Peak Value I PPM Half Value - I PPM I PP 2 T J = 25 °C Pulse Width (t d) is defined as the Point where the Peak Current decays to 50 % of I PPM t d t r = 10 µs t r = 8 µs t d = 1000 µs t d = 20 µs Reverse Voltage (V) 10 000 100 10 110 100 1000 T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p Measured at Stand-off Voltage V WM Measured at Zero Bias |
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