Datenblatt-Suchmaschine für elektronische Bauteile |
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SS10PH9 Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SS10PH9 Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 89000 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 19-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount High Voltage Schottky Rectifiers SS10PH9, SS10PH10 Vishay General Semiconductor New Product TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum • Low leakage current • Meets MSL level 1, per J-STD-020 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 90 V, 100 V IFSM 200 A EAS 20 mJ VF at IF = 10 A 0.661 V IR 0.3 μA TJ max. 175 °C TO-277A (SMPC) Anode 1 Anode 2 Cathode K K 2 1 eSMP® Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS10PH9 SS10PH10 UNIT Device marking code 10H9 10H10 Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 20 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C |
Ähnliche Teilenummer - SS10PH9_11 |
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Ähnliche Beschreibung - SS10PH9_11 |
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