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SSA23L-M3-5AT Datenblatt(PDF) 1 Page - Vishay Siliconix

Teilenummer SSA23L-M3-5AT
Bauteilbeschribung  High-Current Density Surface Mount Schottky Rectifier
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SSA23L-M3-5AT Datenblatt(HTML) 1 Page - Vishay Siliconix

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Document Number: 89280
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 20-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High-Current Density Surface Mount Schottky Rectifier
SSA23L, SSA24
Vishay General Semiconductor
New Product
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
30 V, 40 V
IFSM
60 A
EAS
11.25 mJ
VF
0.38 V, 0.42 V
TJ max.
150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SSA23L
SSA24
UNIT
Device marking code
23L
S24
V
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum RMS voltage
VRMS
21
28
V
Maximum DC blocking voltage
VDC
30
40
V
Maximum average forward rectified currentat TL (fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single halfsine-wave
superimposed on rated load
IFSM
60
A
Non-repetitive avalanche energy at TA = 25 °C, IAS = 1.5 A, L = 10 mH
EAS
11.25
mJ
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C


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