TSFF5510_09 datasheet(4/5 Pages) VISHAY

Teilenummer	TSFF5510

Bauteilbeschribung	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

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Hersteller	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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4 / 5 page

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For technical questions, contact: emittertechsupport@vishay.com

Document Number: 81835

4

Rev. 1.2, 25-Jun-09

TSFF5510

Vishay Semiconductors High Speed Infrared Emitting Diode,

870 nm, GaAlAs Double Hetero

PACKAGE DIMENSIONS in millimeters

C

A

Ø 4.8 ± 0.15

SR2.35

Area not plane

2.54 nom.

1.1 ± 0.25

0.5

+ 0.15

- 0.05

specifications

according to DIN

technical drawings

Drawing-No.: 6.544-5390.01-4

Issue: 2; 19.05.09

20796

0.5

+ 0.15

- 0.05

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