BC638 datasheet(3/5 Pages) SIEMENS

Teilenummer	BC638

Bauteilbeschribung	PNP Silicon AF Transistors (High current gain High collector current)

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Hersteller	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

3

BC 636

… BC 640

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

DC current gain

IC = 5 mA; VCE = 2 V

IC = 150 mA; VCE = 2 V1)

IC = 500 mA; VCE = 2 V1)

V

Collector-emitter breakdown voltage

IC = 10 mA

BC 636

BC 638

BC 640

V(BR)CE0

45

60

80

–

nA

µA

Collector cutoff current

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

ICB0

–

100

20

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 100

µA

BC 636

BC 638

BC 640

V(BR)CB0

45

60

100

–

Emitter-base breakdown voltage

IE = 10

µA

V(BR)EB0

5––

mV

Collector-emitter saturation voltage1)

IC = 500 mA; IB = 50 mA

VCEsat

–

500

–

hFE

25

40

25

–

250

–

V

Base-emitter voltage1)

IC = 500 mA; VCE = 2 V

VBE

––1

nA

Emitter cutoff current

VEB = 4 V

IEB0

–

100

AC characteristics

MHz

Transition frequency

IC = 50 mA, VCE = 10 V, f = 20 MHz

fT

–

100

–

1)

Pulse test: t

≤ 300 µs, D ≤ 2%.

Ähnliche Beschreibung - BC638

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BC638 Datenblatt(PDF) 3 Page - Siemens Semiconductor Group

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Ähnliche Teilenummer - BC638

Ähnliche Beschreibung - BC638

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