BCW65A datasheet(3/6 Pages) SIEMENS

Teilenummer	BCW65A

Bauteilbeschribung	NPN Silicon AF Transistors (For general AF applications High current gain)

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Hersteller	SIEMENS [Siemens Semiconductor Group]

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3 / 6 page

BCW 65

BCW 66

Semiconductor Group

3

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

V

Collector-emitter breakdown voltage

IC = 10 mA

BCW 65

BCW 66

V(BR)CE0

32

45

–

nA

µA

Collector cutoff current

VCB = 32 V

BCW 65

VCB = 45 V

BCW 66

VCB = 32 V, TA = 150 ˚C

BCW 65

VCB = 45 V, TA = 150 ˚C

BCW 66

ICB0

–

20

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 10

µA

BCW 65

BCW 66

V(BR)CB0

60

75

–

Emitter-base breakdown voltage, IE = 10

µA

V(BR)EB0

5––

–

DC current gain1)

IC = 100

µA, VCE = 10 V

BCW 65 A, BCW 66 F

BCW 65 B, BCW 66 G

BCW 65 C, BCW 66 H

IC = 10 mA, VCE = 1 V

BCW 65 A, BCW 66 F

BCW 65 B, BCW 66 G

BCW 65 C, BCW 66 H

IC = 100 mA, VCE = 1 V

BCW 65 A, BCW 66 F

BCW 65 B, BCW 66 G

BCW 65 C, BCW 66 H

IC = 500 mA, VCE = 2 V

BCW 65 A, BCW 66 F

BCW 65 B, BCW 66 G

BCW 65 C, BCW 66 H

hFE

35

50

80

75

110

180

100

160

250

35

60

100

–

160

250

350

–

250

400

630

–

nA

Emitter-base cutoff current, VEB = 4 V

IEB0

––20

1)

Pulse test: t

≤ 300 µs, D = 2 %.

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