BCX53 datasheet(3/5 Pages) SIEMENS

Teilenummer	BCX53

Bauteilbeschribung	PNP Silicon AF Transistors

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Hersteller	SIEMENS [Siemens Semiconductor Group]

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BCX 51 ... BCX 53

Semiconductor Group

3

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

–

DC current gain1)

IC = 5 mA, VCE = 2 V

IC = 150 mA, VCE = 2 V

BCX 51, BCX 52, BCX 53

BCX 51-10, BCX 52-10, BCX 53-10

BCX 51-16, BCX 52-16, BCX 53-16

IC = 500 mA, VCE = 2 V

hFE

25

40

63

100

25

–

100

160

–

250

160

250

–

V

Collector-emitter breakdown voltage

IC = 10 mA

BCX 51

BCX 52

BCX 53

V(BR)CE0

45

60

80

–

nA

µA

Collector cutoff current

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

ICB0

–

100

20

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 100

µA

BCX 51

BCX 52

BCX 53

V(BR)CB0

45

60

100

–

Emitter-base breakdown voltage

IE = 10

µA

V(BR)EB0

5––

V

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat

–

0.5

Base-emitter voltage1)

IC = 500 mA, VCE = 2 V

VBE

––1

nA

Emitter cutoff current

VEB = 4 V

IEB0

––20

MHz

Transition frequency

IC = 50 mA, VCE = 10 V, f = 20 MHz

fT

–

125

–

AC characteristics

1)

Pulse test: t

≤ 300 µs, D = 2 %.

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