Datenblatt-Suchmaschine für elektronische Bauteile |
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BF1009S Datenblatt(PDF) 2 Page - Siemens Semiconductor Group |
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BF1009S Datenblatt(HTML) 2 Page - Siemens Semiconductor Group |
2 / 4 page BF 1009S Semiconductor Group 2 Au -25-1998 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Drain-source breakdown voltage ID = 300 µA, -VG1S = 4 V, - VG2S = 4 V V - V(BR)DS - 16 Gate 1 source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 - 12 ± V(BR)G1SS 8 Gate 2 source breakdown voltage ± IG2S = 10 mA, VG1S = 0 V, VDS = 0 V - 16 10 ± V(BR)G2SS Gate 1 source current VG1S = 6 V, VG2S = 0 V - - µA 60 + IG1SS Gate 2 source leakage current ± VG2S = 8 V, VG1S = 0 V, VDS = 0 V ± IG2SS - - nA 50 IDSS - 500 µA - Drain current VDS = 9 V, VG1S = 0 , VG2S = 6 V IDSO 10 14 Operating current (selfbiased) VDS = 9 V, VG2S = 6 V mA 19 VG2S(p) - 0.9 - V Gate 2-source pinch-off voltage VDS = 9 V, ID = 100 µA AC characteristics Forward transconductance (self biased) VDS = 9 V, VG2S = 6 V, f = 1 kHz gfs 26 30 - mS Gate 1-input capacitance (self biased) VDS = 9 V, VG2S = 6 V, f = 1 MHz Cg1ss - 2.1 2.7 pF Output capacitance (self biased) VDS = 9 V, VG2S = 6 V, f = 100 MHz Cdss - 0.9 - Power gain (self biased) VDS = 9 V, VG2S = 6 V, f = 800 MHz Gps 18 22 - dB Noise figure (self biased) VDS = 9 V, VG2S = 6 V, f = 800 MHz F800 - 1.4 - Gain control range (self biased) VDS = 9 V, VG2S = 1 V, f = 800 MHz ∆G ps 40 50 - Semiconductor Group 2 1998-11-01 |
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