BC807-25W datasheet(1/2 Pages) HTSEMI

Teilenummer	BC807-25W

Bauteilbeschribung	TRANSISTOR (PNP)

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Hersteller	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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BC807-16W

BC807-25W

BC807-40W

FEATURES

·Ldeally suited for automatic insertion

·epitaxial planar die construction

·complementary NPN type available(BC817)

MARKING: 807-16:5A;

807-25:5B;

807-40:5C

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.5

A

PC

Collector Power Dissipation

0.3

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

VCBO

IC= -10μA, IE=0

-50

V

Collector-emitter breakdown voltage

VCEO

IC= -10mA, IB=0

-45

V

Emitter-base breakdown voltage

VEBO

IE= -1μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -45V, IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE= -40V, IB=0

-0.2

μA

Emitter cut-off current

IEBO

VEB= -4 V,

IC=0

-0.1

μA

DC current gain

807-16

807-25

807-40

hFE(1)

VCE= -1V,

IC= -100mA

100

160

250

400

600

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -50mA

-0.7

V

Base-emitter saturation voltage

VBE(sat)

IC= -500mA, IB= -50mA

-1.2

V

Transition frequency

fT

VCE= -5V, IC= -10mA

f=100MHz

100

MHz

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

BC807W

TRANSISTOR (PNP)

１　

Ｄａｔｅ：２０１１／０５

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