Datenblatt-Suchmaschine für elektronische Bauteile |
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1N4448W-V Datenblatt(PDF) 4 Page - Vishay Siliconix |
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1N4448W-V Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 5 page www.vishay.com 4 Document Number 85722 Rev. 1.4, 17-Aug-10 1N4448W-V Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Package Dimensions in millimeters (inches): SOD-123 Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration 18106 2.85 (0.112) 2.55 (0.100) 3.85 (0.152) 3.55 (0.140) Mounting Pad Layout 2.5 (0.098) 0.85 (0.033) 0.85 (0.033) Cathode bar 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 |
Ähnliche Teilenummer - 1N4448W-V_12 |
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Ähnliche Beschreibung - 1N4448W-V_12 |
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