Datenblatt-Suchmaschine für elektronische Bauteile |
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SD803C04S10C Datenblatt(PDF) 6 Page - Vishay Siliconix |
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SD803C04S10C Datenblatt(HTML) 6 Page - Vishay Siliconix |
6 / 9 page www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93180 6 Revision: 04-Aug-08 SD803C..C Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 845 A Fig. 13 - Recovery Current Characteristics Fig. 14 - Recovery Time Characteristics Fig. 15 - Recovery Charge Characteristics Fig. 16 - Recovery Current Characteristics Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics 10 20 30 40 50 60 70 80 90 100 110 120 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) I = 1000 A Square Pulse FM 500 A 250 A SD803C..S10C Series T = 125 °C; V = 30V r J 2 2.5 3 3.5 4 0 0 1 0 1 Ra te Of Fall Of Forward Current - d i/d t (A/ µs) I = 1000 A Sq ua re Pulse FM 500 A 250 A SD803C..S15C Series T = 125 °C; V = 30V J r 40 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) I = 1000 A Sq ua re Pulse FM 500 A 250 A SD803C..S15C Series T = 125 °C; V = 30V r J 20 30 40 50 60 70 80 90 100 110 120 130 140 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ µs) I = 1000 A Square Pulse FM 500 A 250 A SD803C..S15C Series T = 125 °C; V = 30V r J 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E4 1 2 0.1 Pulse Basewidth (µs) 4 d v/ d t = 1000V/ µs Sinusoidal Pulse 20 joules p er p ulse 10 0.4 0.2 0.04 T = 125°C, V = 800V J RRM 0.02 0.01 SD803C..S10C Series tp 1E11E2 1E31E4 1 2 0.1 Pulse Basewidth (µs) 4 20 joules per pulse 10 0.4 0.2 0.04 T = 125°C, V = 800V Trapezoidal Pulse d v/ dt = 1000V/ µs; di/ dt=50A/ µs SD803C..S10C Series J RRM tp |
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