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LC5523D Datenblatt(PDF) 9 Page - Sanken electric |
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LC5523D Datenblatt(HTML) 9 Page - Sanken electric |
9 / 40 page 9 SANKEN ELECTRIC CO., LTD. LC5500-AN, Rev.1.2 Electrical Characteristics This section provides separate sets of electrical characteristic data, using representative examples (refer to individual data- sheets for more details): • LC551xD series (non-isolated): LC5513D is the example • LC552xD series (isolated): LC5521D is the example • LC552xF series (isolated): LC5523F is the example Current direction is sink is positive (+) and source is nega- tive (–) in reference to the IC. LC5513D Absolute Maximum Ratings TA = 25°C, unless otherwise specified Characteristic Symbol Notes Pins Rating Unit Drain Current1 IDPeak Single pulse 8 – 1 4.0 A Single Pulse Avalanche Energy1 EAS ILPeak = 2.7 A, VDD = 99 V, L = 20 mH 8 – 1 86 mJ Supply Voltage for Controller Chip VCC 2 – 1 35 V OCP Pin Voltage VOCP 3 – 1 −2.0 to 5.0 V COMP Pin Voltage VCOMP 4 – 1 −0.3 to 7.0 V ISENSE Pin Voltage VISEN 6 – 1 −0.3 to 5.0 V Allowable Power Dissipation of MOSFET2 PD1 8 – 1 0.97 W Operating Ambient Temperature TOP ―−55 to 125 °C Storage Temperature Tstg ―−55 to 125 °C Channel Temperature Tch ― 150 °C 1 Refer to each individual product datasheet for details. 2 Mounted on a 15 mm × 15 mm PCB. LC5513D ELECTRICAL CHARACTERISTICS (MOSFET) TA = 25°C, unless otherwise specified Characteristic Symbol Test Conditions Pins Min. Typ. Max. Unit Drain-to-Source Breakdown Voltage1 VDSS 8 – 1 650 ―― V Drain Leakage Current IDSS 8 – 1 ―― 300 μA On Resistance1 RDS(on) 8 – 1 ―― 1.9 Ω Switching Time1 tf 8 – 1 ―― 400 ns Thermal Resistance1,2 Rθch-c Between channel and case ――― 35.5 °C/W 1 Refer to each individual product datasheet for details. 2 The thermal resistance between the channels of the MOSFET and the case. TC measured at the center of the case top surface. |
Ähnliche Teilenummer - LC5523D |
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Ähnliche Beschreibung - LC5523D |
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