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AD7608 Datenblatt(PDF) 7 Page - Analog Devices

Teilenummer AD7608
Bauteilbeschribung  8-Channel Differential DAS with 18-Bit, Bipolar, Simultaneous Sampling ADC
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Data Sheet
AD7609
Rev. A | Page 7 of 36
TIMING SPECIFICATIONS
AVCC = 4.75 V to 5.25 V, VDRIVE = 2.3 V to 5.25 V, VREF = 2.5 V external reference/ internal reference, TA = TMIN to TMAX,
unless otherwise noted.1
Table 3.
Limit at TMIN, TMAX
Parameter
Min
Typ
Max
Unit
Description
PARALLEL/SERIAL/BYTE MODE
tCYCLE
1/throughput rate
5
µs
Parallel mode, reading during; or after conversion VDRIVE = 2.7 V to 5.25 V; or
serial mode: VDRIVE = 3.3 V to 5.25 V, reading during a conversion using DOUTA
and DOUTB lines
5
µs
Parallel mode reading after conversion VDRIVE = 2.3 V
10.1
µs
Serial mode reading after conversion; VDRIVE = 2.7 V, DOUTA and DOUTB lines
11.5
µs
Serial mode reading after a conversion; VDRIVE = 2.3 V, DOUTA and DOUTB lines
tCONV
Conversion time
3.45
4
4.15
µs
Oversampling off
7.87
9.1
µs
Oversampling by 2
16.05
18.8
µs
Oversampling by 4
33
39
µs
Oversampling by 8
66
78
µs
Oversampling by 16
133
158
µs
Oversampling by 32
257
315
µs
Oversampling by 64
tWAKE-UP STANDBY
100
µs
STBY rising edge to CONVST x rising edge; power-up time from standby mode
tWAKE-UP SHUTDOWN
Internal Reference
30
ms
STBY rising edge to CONVST x rising edge; power-up time from
shutdown mode
External Reference
13
ms
STBY rising edge to CONVST x rising edge; power-up time from
shutdown mode
tRESET
50
ns
RESET high pulse width
tOS_SETUP
20
ns
BUSY to OS x pin setup time
tOS_HOLD
20
ns
BUSY to OS x pin hold time
t1
45
ns
CONVST x high to BUSY high
t2
25
ns
Minimum CONVST x low pulse
t3
25
ns
Minimum CONVST x high pulse
t4
0
ns
BUSY falling edge to CS falling edge setup time
t52
0.5
ms
Maximum delay allowed between CONVST A, CONVST B rising edges
t6
25
ns
Maximum time between last CS rising edge and BUSY falling edge
t7
25
ns
Minimum delay between RESET low to CONVST x high
PARALLEL READ OPERATION
t8
0
ns
CS to RD setup time
t9
0
ns
CS to RD hold time
t10
RD low pulse width
19
ns
VDRIVE above 4.75 V
24
ns
VDRIVE above 3.3 V
30
ns
VDRIVE above 2.7 V
37
ns
VDRIVE above 2.3 V
t11
15
ns
RD high pulse width
t12
22
ns
CS high pulse width (see Figure 5); CS and RD linked


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