Datenblatt-Suchmaschine für elektronische Bauteile |
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BUZ111S Datenblatt(PDF) 2 Page - Siemens Semiconductor Group |
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BUZ111S Datenblatt(HTML) 2 Page - Siemens Semiconductor Group |
2 / 8 page Semiconductor Group 2 28/Jan/1998 BUZ111S SPP80N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Tj -55 ... + 175 °C Storage temperature Tstg -55 ... + 175 Thermal resistance, junction - case RthJC ≤ 0.6 K/W Thermal resistance, junction - ambient RthJA ≤ 62 IEC climatic category, DIN IEC 68-1 55 / 175 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 55 - - V Gate threshold voltage VGS=VDS, ID = 240 µA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C IDSS - - - - 0.1 - 100 1 0.1 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-resistance VGS = 10 V, ID = 80 A RDS(on) - 0.0065 0.008 Ω |
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