FW217A datasheet(2/4 Pages) SANYO

Teilenummer	FW217A

Bauteilbeschribung	N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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Hersteller	SANYO [Sanyo Semicon Device]

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FW217A

No.8994-2/4

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

35

V

Zero-Gate Voltage Drain Current

IDSS

VDS=35V, VGS=0V

1

μA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.7

2.6

V

Forward Transfer Admittance

| yfs |

VDS=10V, ID=6A

3

S

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=6A, VGS=10V

30

39

mΩ

RDS(on)2

ID=3A, VGS=4.5V

50

70

mΩ

Input Capacitance

Ciss

VDS=20V, f=1MHz

470

pF

Output Capacitance

Coss

70

pF

Reverse Transfer Capacitance

Crss

35

pF

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

8ns

Rise Time

tr

34

ns

Turn-OFF Delay Time

td(off)

31

ns

Fall Time

tf

30

ns

Total Gate Charge

Qg

VDS=20V, VGS=10V, ID=6A

10

nC

Gate-to-Source Charge

Qgs

2nC

Gate-to-Drain “Miller” Charge

Qgd

2nC

Diode Forward Voltage

VSD

IS=6A, VGS=0V

0.84

1.2

V

Switching Time Test Circuit

PW=10μs

D.C.≤1%

P.G

50Ω

G

S

D

ID=6A

RL=3Ω

VDD=20V

VOUT

VIN

10V

0V

VIN

FW217A

IT16778

IT16779

05

0

6

2

1

4

3

5

1.0

0.2

0.3

0.4

0.1

0.5

0.6

0.7

0.8

0.9

0

10

4

123

6

1

2

3

8

4

7

9

5

3.5V

VGS=2.5V

VDS=10V

3.0V

ID -- VGS

Gate-to-Source Voltage, VGS -- V

Drain-to-Source Voltage, VDS -- V

ID -- VDS

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