Datenblatt-Suchmaschine für elektronische Bauteile |
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BUZ272 Datenblatt(PDF) 7 Page - Siemens Semiconductor Group |
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BUZ272 Datenblatt(HTML) 7 Page - Siemens Semiconductor Group |
7 / 9 page 7 07/96 Semiconductor Group BUZ 272 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: I D = -9.5 A, VGS = -10 V -60 -20 20 60 100 °C 160 T j 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Ω 0.9 R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: V GS = VDS, ID = 1 mA 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0 V -4.6 V GS(th) -60 -20 20 60 100 °C 160 T j 2% typ 98% Typ. capacitances C = f (VDS) parameter: VGS = 0V, f = 1MHz 0 -5 -10 -15 -20 -25 -30 V -40 V DS -2 10 -1 10 0 10 1 10 nF C C rss C oss C iss Forward characteristics of reverse diode IF = ƒ(VSD) parameter: T j, tp = 80 µs -1 -10 0 -10 1 -10 2 -10 A I F 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 V SD T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) |
Ähnliche Teilenummer - BUZ272 |
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Ähnliche Beschreibung - BUZ272 |
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