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BUZ40 Datenblatt(PDF) 8 Page - Siemens Semiconductor Group |
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BUZ40 Datenblatt(HTML) 8 Page - Siemens Semiconductor Group |
8 / 9 page Semiconductor Group 8 07/96 BUZ 40 B Avalanche energy E AS = ƒ(Tj) parameter: ID = 10 A, VDD = 50 V R GS = 25 Ω, L = 10.3 mH 20 40 60 80 100 120 °C 160 T j 0 50 100 150 200 250 300 350 400 450 500 mJ 600 E AS Typ. gate charge VGS = ƒ(QGate) parameter: I D puls = 12 A 0 20 40 60 80 nC 110 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 T j 450 460 470 480 490 500 510 520 530 540 550 560 570 580 V 600 V (BR)DSS |
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