2SJ1151STR-E datasheet(4/7 Pages) RENESAS

Teilenummer	2SJ1151STR-E

Bauteilbeschribung	Silicon N Channel MOS FET

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Hersteller	RENESAS [Renesas Technology Corp]

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4 / 7 page

2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)

Preliminary

R07DS0397EJ0300 Rev.3.00

Page 4 of 6

May 16, 2011

10

8

6

4

2

0

40

80

120

160

Case Temperature TC (°C)

–40

Static Drain to Source on State

Resistance vs. Temperature

VGS = 10 V

Pulse Test

ID = 2 A

0.5 A

1 A

Forward Transfer Admittance

vs. Drain Current

5

2

1.0

0.5

0.05

0.10.21.02

5

Drain Current ID (A)

0.1

0.2

0.5

VDS = 20 V

Pulse Test

75

°C

–25

°C

TC = 25°C

Body to Drain Diode Reverse

Recovery Time

di/dt = 100 A/

μs, Ta = 25°C

VGS = 0

Pulse Test

Reverse Drain Current IDR (A)

1,000

500

100

50

20

10

200

0.05

0.10.20.5

1.02

5

Typical Capacitance

vs. Drain to Source Voltage

1,000

100

10

1

010

20

30

40

50

Drain to Source Voltage VDS (V)

Coss

Ciss

Crss

VGS = 0

f = 1 MHz

Dynamic Input Characteristics

500

400

300

200

100

0

2

46

8

10

Gate Charge Qg (nc)

20

16

12

8

4

0

400 V

100 V

VDS

ID = 1.5 A

VGS

250 V

VDD = 400 V

250 V

100 V

Switching Characteristics

100

20

10

5

2

1

50

0.05

0.10.20.5

1.02

5

Drain Current ID (A)

tf

VGS = 10 V VDD = 30 V

PW = 2

μs, duty < 1%

td (on)

tr

td (off)

•

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