STU4A60S datasheet(1/5 Pages) WINSEMI

Teilenummer	STU4A60S

Bauteilbeschribung	Sensitive Gate Triac

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Hersteller	WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

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STU4A60S

Jan 2009. Rev. 0

1/5

Sensitive

Sensitive Gate

Gate

Gate Triac

Triac

Features

◆

Repetitive Peak Off-State Voltage : 600V

◆

R.M.S On-State Current ( IT(RMS)= 4 A )

◆

Low On-State Voltage (1.6V(Typ.) @ ITM)

◆

High Commutation dv/dt

◆

Sensitive Gate Triggering 4 Mode

TO251

General

General Description

Description

Sensitive gate triggering Triac is suitable for direct coupling

to TTL, HTL, CMOS and application such as various logic

functions, low power AC switching applications, such as fan

speed, small light controllers and home appliance equipment.

Absolute

Absolute Maximum

Maximum

Maximum Ratings

Ratings

Ratings (T

J=

25°C unless otherwise specified)

Thermal Characteristics

S

Sy

y

ymbol

mbol

Para

Param

m

e

eter

ter

C

Co

o

on

n

nditi

diti

o

on

n

Ratin

Rating

g

gs

s

Uni

Unitttts

s

VDRM

Repetitive Peak Off-State Voltage

600

V

IT(RMS)

R.M.S On-State Current

TC = 109 °C

4.0

A

ITSM

Surge On-State Current

One Cycle, 50Hz/60Hz,

Peak, Non-Repetitive

30/33

A

I2t

4.5

A2s

PGM

Peak Gate Power Dissipation

1.5

W

PG(AV)

Average Gate Power Dissipation

0.1

W

IGM

Peak Gate Current

1.0

A

VGM

Peak Gate Voltage

7.0

V

TJ

Operating Junction Temperature

- 40 ~ 125

°C

TSTG

Storage Temperature

- 40 ~ 150

°C

Symbol

Parameter

Value

Units

RθJc

Thermal Resistance Junction to Case(DC)

2.6

℃/W

RθJA

Thermal Resistance Junction to Ambient(DC)

100

℃/W

G

A

K

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Apollo Electron Co., Lt...	TP4A60S	1Mb / 5P	Sensitive Gate Triac
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Shenzhen Winsemi Microe...	WTD4A60S	445Kb / 5P	Sensitive Gate Triac
NTE Electronics	NTE56045	21Kb / 2P	TRIAC, 16A, Sensitive Gate
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STU4A60S Datenblatt(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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