2SC3355-T datasheet(6/10 Pages) RENESAS

Teilenummer	2SC3355-T

Bauteilbeschribung	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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Hersteller	RENESAS [Renesas Technology Corp]

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Data Sheet PU10207EJ01V0DS

4

2SC2570A

VCE = 10 V

f = 1 GHz

Collector Current IC (mA)

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

15

10

5

0

0.5 0.7 1

5 7 10

50 70

7

0

1

2

3

4

5

6

0.5 0.7 1

5 7 10

50 70

Collector Current IC (mA)

NOISE FIGURE vs.

COLLECTOR CURRENT

VCE = 10 V

f = 1 GHz

VCE = 10 V

IC = 5 mA

Frequency f (GHz)

INSERTION POWER GAIN, MAG

vs. FREQUENCY

25

15

20

5

10

0

0.05

0.1

0.5

1

0.2

2

MAG

|S21e|

2

VCE = 10 V

IC = 20 mA

Frequency f (GHz)

INSERTION POWER GAIN, MAG

vs. FREQUENCY

25

15

20

5

10

0

0.05

0.1

0.5

1

0.2

2

MAG

|S21e|

2

Remark The graphs indicate nominal characteristics.

Ähnliche Beschreibung - 2SC3355-T

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