Datenblatt-Suchmaschine für elektronische Bauteile |
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AM4890N Datenblatt(PDF) 1 Page - Analog Power |
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AM4890N Datenblatt(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM4890N Dual N-Channel 150-V (D-S) MOSFET VDS (V) ID(A) 1.4 1.1 Symbol Limit Units VDS 150 VGS ±20 TA=25°C 1.4 TA=70°C 1.1 IDM 10 IS 2.6 A TA=25°C 2.1 TA=70°C 1.3 TJ, Tstg -55 to 150 °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage V Gate-Source Voltage PRODUCT SUMMARY rDS(on) (Ω) 150 0.7 @ VGS = 10V 1.2 @ VGS = 5.5V Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a t <= 10 sec RθJA °C/W Steady State ID A Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a PD W Continuous Drain Current a Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters © Preliminary 1 Publication Order Number: DS_AM4890N_1A |
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Ähnliche Beschreibung - AM4890N |
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