AM7101P datasheet(1/3 Pages) ANALOGPOWER

Teilenummer	AM7101P

Bauteilbeschribung	P-Channel 100-V (D-S) MOSFET

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Hersteller	ANALOGPOWER [Analog Power]

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AM7101P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM7101_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

rDS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

P-Channel 100-V (D-S) MOSFET

•

Low rDS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

DFN3x3-8PP saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

VDS (V)

rDS(on) m( )

ID (A)

269 @ VGS = -10V

-3

289 @ VGS = -5.5V

-2.9

PRODUCT SUMMARY

-100

Symbol Maximum Units

VDS

-100

VGS

±20

TA=25

o

C

-3

TA=70

o

C

-2.5

IDM

±50

IS

-2.1

A

TA=25

o

C

3.5

TA=70

o

C

2.0

TJ, Tstg

-55 to 150

o

C

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parame te r

Pulsed Drain Current

b

V

Gate-Source Voltage

S

G

1

2

3

4

DFN3x3-8PP

Top View

D

8

7

6

5

S

D

G

P-Channel MOSFET

Symbol

Maximum

Units

t <=10 sec

35

o

C/W

Steady State

81

o

C/W

THERMALRESISTANCERATINGS

Parameter

MaximumJunction-to-Ambient

a

RθJA

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