Datenblatt-Suchmaschine für elektronische Bauteile |
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1N50 Datenblatt(PDF) 1 Page - Unisonic Technologies |
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1N50 Datenblatt(HTML) 1 Page - Unisonic Technologies |
1 / 6 page UNISONIC TECHNOLOGIES CO., LTD 1N50 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-548.b 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 1N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. FEATURES * RDS(ON)=6.0Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested SYMBOL 1.Gate 3.Source 2.Drain TO-220 1 ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 1N50L-TA3-T 1N50G-TA3-T TO-220 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source |
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