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2SA1700 Datenblatt(PDF) 3 Page - Unisonic Technologies |
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3 / 3 page 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 3 www.unisonic.com.tw QW-R213-011.B CLASSIFICATION OF hFE RANK D E RANGE 60-120 100-200 TEST CIRCUIT (Unit : (resistance : Ω, capacitance : F)) INPUT OUTPUT -10IB1= 10IB2=Ic= -50mA RL=3kΩ,RB=200Ω at Ic= -50mA PW=20μs Duty Cycle 1% IB1 IB2 RL 50 VBE= 1V 100μ + 470μ + VR RB VCC= -150V UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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