2SC4027

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R209-018.C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

180

V

Collector to Emitter Voltage

160

V

Emitter to Base Voltage

6

V

Collector Current

1.5

A

Collector Current (Pulse)

2.5

A

Collector Dissipation

TO-220

2

W

TO-252

1

TO-220

65

W

TO-252

15

Junction Temperature

150

°C

Storage Temperature

-55 ~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

180

V

Collector-Emitter Breakdown Voltage

160

V

Emitter-Base Breakdown Voltage

6

V

Collector-Emitter Saturation Voltage

0.13 0.45

V

Base-Emitter Saturation Voltage

0.85

1.2

V

Collector Cutoff Current

1.0

μA

Emitter Cutoff Current

1.0

μA

DC Current Gain

100

400

80

Gain-Bandwidth Product

120

MHz

Output Capacitance

12

pF

Turn-On Time

See specified Test Circuit

60

μs

Storage Time

1.2

μs

Fall Time

80

μs

RANK

R

S

T

RANGE

100~200

140~280

200~400