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3N50Z Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 3N50Z
Bauteilbeschribung  3A, 500V N-CHANNEL POWER MOSFET
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

3N50Z Datenblatt(HTML) 2 Page - Unisonic Technologies

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3N50Z
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-747.a
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous (TC=25°C)
ID
3 (Note 5)
A
Pulsed (Note 2)
IDM
12 (Note 5)
A
Avalanche Current (Note 2)
IAR
3
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
200
mJ
Repetitive (Note 4)
EAR
6.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TC=25°C)
PD
25
W
Derate above 25°C
0.2
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 40mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
4.9
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
500
V
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
1
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+30V, VDS=0V
+100 nA
Reverse
VGS=-30V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=1.5A
2.2
3.2
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
280 365
pF
Output Capacitance
COSS
50
65
pF
Reverse Transfer Capacitance
CRSS
8.5
11
pF


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