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6N90G-TF3-T Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 6N90G-TF3-T
Bauteilbeschribung  6.2A, 900V N-CHANNEL POWER MOSFET
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
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6N90G-TF3-T Datenblatt(HTML) 2 Page - Unisonic Technologies

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6N90
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-492.C
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
900
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous (TC=25°C)
ID
6.2
A
Pulsed (Note 2)
IDM
24
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
650
mJ
Repetitive (Note 2)
EAR
16.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
TO-220
PD
167
W
TO-220F/TO220F1
56
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 34mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
TO-220
θJC
0.75
°C/W
TO-220F/TO220F1
2.25
°C/W


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