MCM64AF32

10

MOTOROLA FAST SRAM

– 15

Parameter

Symbol

Min

Max

Unit

Notes

Write Cycle Time

tAVAV

15

—

ns

3

Address Setup Time

tAVWL

0

—

ns

Address Valid to End of Write

tAVWH

12

—

ns

Data Valid to End of Write

tDVWH

7

—

ns

Data Hold Time

tWHDX

0

—

ns

Write Low to Output High–Z

tWLQZ

0

7

ns

5, 6, 7

Write High to Output Active

tWHQX

4

—

ns

5, 6, 7

Write Recovery Time

tWHAX

0

—

ns

NOTES:

1. A write occurs when CWE is low.

2. If COE goes low coincident with or after CWE goes low, the output will remain in a high impedance state.

3. All timings are referenced from the last valid address to the first address transition.

4. If COE

≥ VIH, the output will remain in a high impedance state.

5. At any given voltage and temperature, tWLQZ (max) is less than tWHQX (min), both for a given device and from device to device.

6. Transition is measured

± 500 mV from steady–state voltage with load of Figure 1B.

7. This parameter is sampled and not 100% tested.

DATA VALID

tDVWH

tAVWL

tAVWH

tAVAV

tWHAX

tWLWH

tWHDX

tWLQZ

tWHQX

HIGH–Z

HIGH–Z

A5 – A17

TWE (WRITE ENABLE)

Q (DATA OUT)

D (DATA IN)

ORDERING INFORMATION

(Order by Full Part Number)

Motorola Memory Prefix

Part Number

Speed (15 = 15 ns)

Package (SG = Gold Pad SIMM)

MCM

64AF32

XX

XX

Full Part Number — MCM64AF32SG15