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Z0103MA,116 Datenblatt(PDF) 6 Page - NXP Semiconductors

Teile-Nr. Z0103MA,116
Beschreibung  Logic level four-quadrant triac
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Hersteller  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

Z0103MA,116 Datenblatt(HTML) 6 Page - NXP Semiconductors

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Z0103MA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 18 March 2011
6 of 13
NXP Semiconductors
Z0103MA
4Q Triac
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT
gate trigger current
VD =12V; IT = 0.1 A; T2+ G+;
Tj =25°C; see Figure 7
--3
mA
VD =12V; IT = 0.1 A; T2+ G-;
Tj =25°C; see Figure 7
--3
mA
VD =12V; IT = 0.1 A; T2- G-;
Tj =25°C; see Figure 7
--3
mA
VD =12V; IT = 0.1 A; T2- G+;
Tj =25°C; see Figure 7
--5
mA
IL
latching current
VD =12V; IG = 0.1 A; T2+ G+;
Tj =25°C; see Figure 8
--7
mA
VD =12V; IG = 0.1 A; T2+ G-;
Tj =25°C; see Figure 8
--15
mA
VD =12V; IG = 0.1 A; T2- G-;
Tj =25°C; see Figure 8
--7
mA
VD =12V; IG = 0.1 A; T2- G+;
Tj =25°C; see Figure 8
--7
mA
IH
holding current
VD =12V; Tj =25 °C; see Figure 9
--7
mA
VT
on-state voltage
IT = 1.4 A; Tj =25°C; see Figure 10
-1.3
1.6
V
VGT
gate trigger voltage
VD =12V; IT = 0.1 A; Tj =25°C;
see Figure 11
--1.3
V
VD =600 V; IT = 0.1 A; Tj =125 °C;
see Figure 11
0.2
--V
ID
off-state current
VD =600 V; Tj = 125 °C
-
-
0.5
mA
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM =402 V; Tj = 110 °C; exponential
waveform; gate open circuit;
see Figure 12
10
--V/µs
dVcom/dt
rate of change of
commutating voltage
VD =400 V; Tj =110 °C;
dIcom/dt = 0.44 A/ms; IT =1A; gate
open circuit
0.5
--V/µs


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