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Z0107NN,135 Datenblatt(PDF) 9 Page - NXP Semiconductors |
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Z0107NN,135 Datenblatt(HTML) 9 Page - NXP Semiconductors |
9 / 14 page Z0107NN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 — 22 March 2011 9 of 14 NXP Semiconductors Z0107NN 4Q Triac Fig 12. Normalized gate trigger voltage as a function of junction temperature Fig 13. Normalized critical rate of rise of off-state voltage as a function of junction temperature; typical values Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration, FET2 (PCB used for thermal tests; heat sink area 400mm2) Tj (°C) -50 150 100 050 003aaa209 0.8 0.4 1.2 1.6 0 VGT(25°C) VGT 1.6 1.2 0.8 0.4 0 A 0 50 100 150 Tj (°C) 003aaa208 003aad209 single shot 0.2 0.1 0.05 0.02 10 -2 10 -1 1 10 10 2 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 10 2 10 3 10 4 tp (s) Zth(j-mb) (K/W) δ = 0.5 10 -6 tp T P t tp T δ = |
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