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N-30EPU06 Datenblatt(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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N-30EPU06 Datenblatt(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 6 page Page 1 of 6 SEMICONDUCTOR N-30EPU06 Series RoHS RoHS Ultrafast Soft Recovery Diode, 30 A FEATURES Ultrafast recovery 175 °C operating junction temperature Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage 600 Continuous forward current lF(AV) TC = 116 °C 30 A Single pulse forward current lFSM 300 Operating junction and storage temperatures - 55 to 175 ELECTRICAL SPECIFICATIONS (TJ = 25 unless otherwise specified) ºC PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V Forward voltage Reverse leakage current Junction capacitance PRODUCT SUMMARY TO-247AC modified Cathode IF(AV) trr VR 1 2 Anode 3 Anode Cathode 30 ns 30 A 600 V 2 Anode to base Cathode to base 1 3 TO-247AB pF µA °C Nell High Power Products - - - FRED N-30EPU06 N-30APU06 VR T , T j Stg TC = 25 °C V VBR, Vr VF lR CT l = 100µA R 600 - - l = 30A F l = 30A, F T = 125°C J V = R V rated R T = 150°C, J V = V rated R R V = 200V R 1.40 1.80 1.70 25 500 - - - - 2.0 35 l = 60A F - 1.1 1.35 - - |
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