SEMICONDUCTOR

RoHS

RoHS

SEMICONDUCTOR

RoHS

RoHS

Page 3 of 5

N-HFA30PA40C

Fig.2 Forward current vs. forward voltage

Fig.3 Reverse recovery time vs. current rate of change

Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration

Rectangular pulse duration (seconds)

Current rate of change(A/μs), -di /dt

F

Fig.4 Reverse recovery charge vs. current rate of change

Fig 5. Reverse recovery current vs. current rate of change

0

Current rate of change (A/μs), -di /dt

F

Current rate of change (A/μs), -di /dt

F

600

800

400

1200

200

1000

2.5

2

1.5

1

0.5

0

0

1200

1000

800

600

400

200

0

600

800

400

1200

200

1000

1.40

1.20

1.00

0.80

0.60

0.40

0.20

0

0.5

SINGLE PULSE

0.1

0.3

0.7

0.9

0.05

Note :

Duty Factor D =t /t

1 2

Peak T = P

xZ

+T

DM

θ

J

JC

C

-5

10

-4

10

-3

10

-2

10

-1

10

1.0

60

50

40

30

20

10

0

T =150°C

J

T =150°C

J

T =125°C

J

T =25°C

J

T =-55°C

J

7.5A

15A

30A

100

80

60

40

20

0

120

T =125°C

J

T

=266V

R

800

700

600

500

400

300

200

100

0

30A

7.5A

15A

T =125°C

J

T

=266V

R

25

20

15

10

5

0

30A

15A

7.5A

T =125°C

J

T

=266V

R