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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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CSD25211W1015 Datenblatt(PDF) 5 Page - Texas Instruments |
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CSD25211W1015 Datenblatt(HTML) 5 Page - Texas Instruments |
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5 / 10 page  0.6 0.8 1 1.2 1.4 −75 −25 25 75 125 175 TC - Case Temperature - ºC ID = 1.5A VGS = 4.5V G001 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 VSD − Source-to-Drain Voltage - V TC = 25°C TC = 125°C G001 0.02 0.1 1 10 15 0.01 0.1 1 10 25 VDS - Drain-to-Source Voltage - V 1ms 10ms 100ms 1s DC Single Pulse Typical RthetaJA = 184ºC/W(min Cu) Area Limited by Rds(on) G001 5 10 50 0.01 0.1 1 t(AV) - Time in Avalanche - ms TC = 125°C TC = 25°C G001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature - ºC G001 CSD25211W1015 www.ti.com SLPS296 – FEBRUARY 2012 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) Figure 8. Normalized On Resistance vs. Temperature Figure 9. Typical Diode Forward Voltage Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs. Temperature Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 5 |
Ähnliche Teilenummer - CSD25211W1015 |
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Ähnliche Beschreibung - CSD25211W1015 |
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