CSD16327Q3

SLPS371

– DECEMBER 2011

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain to Source Voltage

25

V

Drain to Source Leakage Current

1

μA

Gate to Source Leakage Current

100

nA

Gate to Source Threshold Voltage

0.9

1.2

1.4

V

5

6.5

m

Ω

Drain to Source On Resistance

4

4.8

3.4

4

Transconductance

96

S

Dynamic Characteristics

Input Capacitance

1020

1300

pF

Output Capacitance

740

960

pF

Reverse Transfer Capacitance

50

65

pF

Series Gate Resistance

1.4

2.8

Ω

Gate Charge Total (4.5V)

6.2

8.4

nC

Gate Charge Gate to Drain

1.1

nC

Gate Charge Gate to Source

1.8

nC

Qg(th)

Gate Charge at Vth

1

nC

Output Charge

14

nC

Turn On Delay Time

5.3

ns

Rise Time

15

ns

Turn Off Delay Time

13

ns

Fall Time

6.3

ns

Diode Characteristics

Diode Forward Voltage

0.85

1

V

Reverse Recovery Charge

21

nC

Reverse Recovery Time

16

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

1.7

°C/W

56

°C/W

(1)

RqJC is determined with the device mounted on a 1-inch2 (6.45-cm2), Cu pad on a 1.5-inch

× 1.5-inch thick FR4 PCB. RqJC is

specified by design, whereas RqJA is determined by the user

’s board design.

(2)

Device mounted on FR4 material with 1-inch2 2-oz.Cu.

2

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© 2011, Texas Instruments Incorporated

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