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CSD16407Q5 Datenblatt(PDF) 5 Page - Texas Instruments

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Teilenummer CSD16407Q5
Bauteilbeschribung  N-Channel NexFET??Power MOSFETs
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Hersteller  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
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CSD16407Q5 Datenblatt(HTML) 5 Page - Texas Instruments

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TC − Case Temperature − °C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−75
−25
25
75
125
175
G007
ID = 25A
VGS = 10V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD − Source to Drain Voltage − V
G008
TC = 25°C
TC = 125°C
100
1
0.01
0.0001
0.001
0.1
10
VDS − Drain ToSourceVoltage − V
G009
1k
10
0.01
1
100
0.1
0.01
0.1
10
100
1
SinglePulse
R
q
JA =94 C/W(minCu)
o
1ms
10ms
100ms
1s
DC
AreaLimited
byRDS(on)
t(AV) − Time in Avalanche − ms
G010
1k
10
1
100
0.01
0.1
10
100
1
TC = 25°C
TC = 125°C
TC − Case Temperature − °C
0
20
40
60
80
100
120
−50
−25
0
25
50
75
100
125
150
175
G011
CSD16407Q5
www.ti.com
SLPS203A – AUGUST 2009 – REVISED SEPTEMBER 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
Figure 8. On Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
vs
vs
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
vs
TEXT ADDED FOR SPACING
Figure 12. Maximum Drain Current vs. Temperature
Copyright © 2009–2010, Texas Instruments Incorporated
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