Datenblatt-Suchmaschine für elektronische Bauteile |
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BYG21M Datenblatt(PDF) 2 Page - Shenzhen Taychipst Electronic Co., Ltd |
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BYG21M Datenblatt(HTML) 2 Page - Shenzhen Taychipst Electronic Co., Ltd |
2 / 2 page RATINGS AND CHARACTERISTIC CURVES BYG20D THRU BYG20J E-mail: sales@taychipst.com Web Site: www.taychipst.com 2 of 2 200V-600V 1.5A BYG20D THRU BYG20J Fast Silicon Mesa SMD Rectifier 0 40 80 120 160 0.01 0.1 1 10 100 Tj – Junction Temperature ( °C ) 200 94 9347 VR =VRRM Figure 1. Typ. Reverse Current vs. Junction Temperature 0 0 0.4 0.8 1.2 1.6 2.0 Tamb – Ambient Temperature ( °C ) 94 9345 40 80 120 160 200 RthJA=25K/W 100K/W 125K/W 150K/W Figure 2. Max. Average Forward Current vs. Ambient Temperature 01 2 3 4 0.01 0.1 1 10 100 VF – Forward Voltage ( V ) 94 9348 Tj = 125°C 25 °C 75 °C Figure 3. Typ. Forward Current vs. Forward Voltage 0 0.2 0.4 0.6 0.8 0 100 200 300 400 600 IF – Forward Current ( A ) 1.0 94 9349 500 Tamb= 125°C IR=0.5A, iR=0.125A 75 °C 50 °C 25 °C 100 °C Figure 4. Max. Reverse Recovery Time vs. Forward Current 1 10 100 1000 tp – Pulse Length ( s ) 94 9339 10–5 10–4 10–3 10–2 10–1 100 101 102 tp/T=0.5 tp/T=0.2 tp/T=0.1 tp/T=0.05 tp/T=0.02 tp/T=0.01 Single Pulse 125K/W DC Figure 6. Thermal Response |
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