Datenblatt-Suchmaschine für elektronische Bauteile |
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SN74CBTK6800PWRE4 Datenblatt(PDF) 4 Page - Texas Instruments |
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SN74CBTK6800PWRE4 Datenblatt(HTML) 4 Page - Texas Instruments |
4 / 16 page SN74CBTK6800 10-BIT FET BUS SWITCH WITH PRECHARGED OUTPUTS AND ACTIVE-CLAMP UNDERSHOOT-PROTECTION CIRCUIT SCDS107B – APRIL 2000 – REVISED OCTOBER 2000 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 undershoot characteristics PARAMETER TEST CONDITIONS MIN TYP† MAX UNIT VOUTU See Figures 1 and 2, and Table 1 2 VOH–0.3 V † All typical values are at VCC = 5 V (unless otherwise noted), TA = 25°C. Figure 1. Device Test Setup 50 Ω VIN VCC VTR R1 R2 10 pF DUT Figure 2. Transient Input Voltage Waveform –2 V 5.5 V 0 V Table 1. Device Test Conditions PARAMETER VALUE UNIT B port under test‡ See Figure 1 VIN See Figure 2 V tw 20 ns tr 2 ns tf 2 ns R1 = R2 100 k Ω VTR 11 V VCC 5.5 V BIASV Open ‡ Other B-port outputs are open. |
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