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FMBT2222A Datenblatt(PDF) 2 Page - Formosa MS

Teilenummer FMBT2222A
Bauteilbeschribung  600mA Silicon NPN Epitaxial Planar Transistor
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Hersteller  FORMOSA [Formosa MS]
Direct Link  http://www.formosams.com
Logo FORMOSA - Formosa MS

FMBT2222A Datenblatt(HTML) 2 Page - Formosa MS

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600mA Silicon NPN Epitaxial Planar
Transistor
collector-emitterbreakdien voltage.
(BV
= 40V@I =10mA)
S
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
Features
CEO
C
mall load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
Capable of 225mW power dissipation.
High
Suffix "-H" indicates Halogen-free part, ex.FMBT2222-H.
PARAMETER
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Total device dissipation FR-5 board
(1)
Storage temperature
Operating temperature
CONDITIONS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
FMBT2222
-55 ~ +150
-65 ~ +150
75
40
6.0
UNIT
V
V
V
mA
mW
oC
Maximum ratings (AT T =25 C unless otherwise noted)
A
o
Junction to ambient
R
θJA
OC/W
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case :
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Mounting Position : Any
Molded plastic, SOT-23
Weight : Approximated 0.008 gram
P
D
Thermal resistance
T= 25 C
A
O
Derate above 25 C
O
NPN Epitaxial Planar Transistor
Formosa MS
mW/ C
O
Total device dissipation alumina
substrate(2)
P
D
mW
Junction to ambient
R
θJA
OC/W
P
D
Thermal resistance
T= 25 C
A
O
Derate above 25 C
O
mW/ C
O
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
FMBT2222A
60
30
5.0
600
556
225
1.8
417
300
2.4
FMBT2222 / FMBT2222A
Document ID
Issued Date
Revised Date
Revision
Page.
SOT-23
Dimensions in inches and (millimeters)
0.035 (0.89)
0.051 (1.30)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
(A)
(B)
(C)
DS-231107
2008/02/10
2011/07/21
D
9


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