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TPIC5424LNE Datenblatt(PDF) 3 Page - Texas Instruments |
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TPIC5424LNE Datenblatt(HTML) 3 Page - Texas Instruments |
3 / 15 page TPIC5424L HBRIDGE LOGICLEVEL POWER DMOS ARRAY SLIS026A − JUNE 1994 − REVISED NOVEMBER 1994 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 electrical characteristics, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)DSX Drain-to-source breakdown voltage ID = 250 µA, VGS = 0 60 V VGS(th) Gate-to-source threshold voltage ID = 1 mA, See Figure 5 VDS = VGS, 1.5 1.85 2.2 V V(BR) Reverse drain-to-GND breakdown voltage (across D1, D2) Drain-to-GND current = 250 µA 100 V VDS(on) Drain-to-source on-state voltage ID = 1 A, See Notes 2 and 3 VGS = 5 V, 0.4 0.48 V VF(SD) Forward on-state voltage, source-to-drain IS = 1 A, VGS = 0 (Z1, Z2, Z3, Z4), See Notes 2 and 3 and Figure 12 1 1.2 V VF Forward on-state voltage, GND-to-drain ID = 1 A (D1, D2), See Notes 2 and 3 4.6 V IDSS Zero-gate-voltage drain current VDS = 48 V, TC = 25°C 0.05 1 A IDSS Zero-gate-voltage drain current VDS = 48 V, VGS = 0 TC = 125°C 0.5 10 µA IGSSF Forward gate current, drain short circuited to source VGS = 5 V, VDS = 0 10 100 nA IGSSR Reverse gate current, drain short circuited to source VSG = 5 V, VDS = 0 10 100 nA Ilkg Leakage current, drain-to-GND VDGND = 48 V TC = 25°C 0.05 1 A Ilkg Leakage current, drain-to-GND VDGND = 48 V (D1, D2) TC = 125°C 0.5 10 µA rDS(on) Static drain-to-source on-state resistance VGS = 5 V, ID = 1 A, TC = 25°C 0.4 0.48 Ω rDS(on) Static drain-to-source on-state resistance ID = 1 A, See Notes 2 and 3 and Figures 6 and 7 TC = 125°C 0.65 0.68 Ω gfs Forward transconductance VDS = 15 V, ID = 0.5 A, See Notes 2 and 3 and Figure 9 1.25 1.39 S Ciss Short-circuit input capacitance, common source 220 275 Coss Short-circuit output capacitance, common source VDS = 25 V, f = 1 MHz, VGS = 0, See Figure 11 120 150 pF Crss Short-circuit reverse-transfer capacitance, common source VDS = 25 V, f = 1 MHz, VGS = 0, See Figure 11 100 125 pF NOTES: 2. Technique should limit TJ − TC to 10°C maximum. 3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. source-to-drain and GND-to-drain diode characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Z1 and Z3 55 trr Reverse-recovery time I =0.5 A, V = 48 V, Z2 and Z4 150 ns trr Reverse-recovery time IS =0.5 A, VGS = 0, VDS = 48 V, di/dt = 100 A/ µs, D1 and D2 200 ns S VGS = 0, See Figures 1 and 14 DS di/dt = 100 A/ µs, Z1 and Z3 0.06 QRR Total diode charge See Figures 1 and 14 Z2 and Z4 0.3 µC QRR Total diode charge D1 and D2 0.7 µC |
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