Package outline

Page 2

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600mA Silicon PNP Epitaxial Planar

Transistor

Features

Capable of 225mW power dissipation.

Lead-free parts for green partner, exceeds environmental

standards of MIL-STD-19500 /228

Suffix "-H" dinicates Halogen-free part, ex.FMBT4403-H.

•

•

•

PARAMETER

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

Total device dissipation FR-5 board

(1)

Storage temperature

Operating temperature

CONDITIONS

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

D

T

J

T

STG

MIN.

-55

-65

TYP.

MAX.

-40

-40

-5.0

-600

+150

+150

UNIT

V

V

V

mA

mW

o

A

Junction to ambient

R

θJA

556

Mechanical data

•

MIL-STD-750, Method 2026

Epoxy:UL94-V0 rated flame retardant

Molded plastic, SOT-23

P

D

Thermal resistance

225

1.8

O

T = 25 C

A

O

Derate above 25 C

Formosa MS

O

mW/ C

Total device dissipation alumina

substrate(2)

P

D

mW

Junction to ambient

R

θJA

417

P

D

Thermal resistance

300

2.4

O

T = 25 C

A

O

Derate above 25 C

O

mW/ C

1.FR-5 = 1.0 X 0.75 X0.062 in.

2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.

PNP Epitaxial Planar Transistor

FMBT4403

Document ID

Issued Date

Revised Date

Revision

Page.

SOT-23

Dimensions in inches and (millimeters)

0.035 (0.89)

0.051 (1.30)

0.063 (1.60)

0.047 (1.20)

0.108 (2.75)

0.083 (2.10)

0.027 (0.67)

0.013 (0.32)

(A)

(B)

(C)

DS-231118

2008/02/10

2010/03/10

B

10