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TPIC3322L Datenblatt(PDF) 2 Page - Texas Instruments |
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TPIC3322L Datenblatt(HTML) 2 Page - Texas Instruments |
2 / 12 page TPIC3322L 3CHANNEL COMMONDRAIN LOGICLEVEL POWER DMOS ARRAY SLIS035B − JUNE 1994 − REVISED SEPTEMBER 1995 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 2 electrical characteristics, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)DSX Drain-to-source breakdown voltage ID = 250 µA, VGS = 0 60 V VGS(th) Gate-to-source threshold voltage ID = 1 mA, VDS = VGS 1.5 1.85 2.2 V V(BR) Reverse drain-to-GND breakdown voltage (across D1) Drain-to-GND current = 250 µA 100 V VDS(on) Drain-to-source on-state voltage ID = 0.75 A, See Notes 2 and 3 VGS = 5 V, 0.45 0.53 V VF Forward on-state voltage, GND-to-drain ID = 0.75 A, See Notes 2 and 3 1.8 V VF(SD) Forward on-state voltage, source-to-drain IS = 0.75 A, VGS = 0, See Notes 2 and 3 and Figure 12 0.85 1 V IDSS Zero-gate-voltage drain current VDS = 48 V, TC = 25°C 0.05 1 A IDSS Zero-gate-voltage drain current VDS = 48 V, VGS = 0 TC = 125°C 0.5 10 µA IGSSF Forward gate current, drain short circuited to source VGS = 16 V, VDS = 0 10 100 nA IGSSR Reverse gate current, drain short circuited to source VSG = 16 V, VDS = 0 10 100 nA Ilkg Leakage current, drain-to-GND VDGND = 48 V TC = 25°C 0.05 1 A Ilkg Leakage current, drain-to-GND VDGND = 48 V TC = 125°C 0.5 10 µA rDS(on) Static drain-to-source on-state resistance VGS = 5 V, ID = 0.75 A, TC = 25°C 0.6 0.7 Ω rDS(on) Static drain-to-source on-state resistance ID = 0.75 A, See Notes 2 and 3 and Figures 6 and 7 TC = 125°C 0.94 1 Ω gfs Forward transconductance VDS = 10 V, ID = 0.5 A, See Notes 2 and 3 and Figure 9 0.75 0.9 S Ciss Short-circuit input capacitance, common source 115 145 Coss Short-circuit output capacitance, common source VDS = 25 V, f = 1 MHz, VGS = 0, See Figure 11 60 75 pF Crss Short-circuit reverse transfer capacitance, common source VDS = 25 V, f = 1 MHz, VGS = 0, See Figure 11 30 40 pF NOTES: 2. Technique should limit TJ − TC to 10°C maximum. 3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. source-to-drain and GND-to-drain diode characteristics, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT trr(SD) Reverse-recovery time I = 0.375 A, V = 0, Z1, Z2, Z3 30 ns trr(SD) Reverse-recovery time IS = 0.375 A, di/dt = 100 A / µs, VGS = 0, VDS = 48 V, D1 85 ns QRR Total diode charge S di/dt = 100 A / µs, See Figures 1 and 14 GS VDS = 48 V, Z1, Z2, Z3 0.03 µC QRR Total diode charge See Figures 1 and 14 D1 0.19 µC |
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