SDTC114EET1G datasheet(10/13 Pages) ONSEMI

Teilenummer	SDTC114EET1G

Bauteilbeschribung	Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

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DTC114EET1 Series, SDTC114EET1 Series

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10

TYPICAL ELECTRICAL CHARACTERISTICS − DTC123JET1G

75°C

25°C

−25°C

Figure 28. VCE(sat) versus IC

Figure 29. DC Current Gain

Figure 30. Output Capacitance

Figure 31. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (VOLTS)

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 32. Input Voltage versus Output Current

IC, COLLECTOR CURRENT (mA)

1

0.1

50

40

20

10

0

IC, COLLECTOR CURRENT (mA)

100

10

1

1000

10

1

0.001

1.5

45

50

40

30

20

10

0

0.5

1

2

4

100

6

5

4

3

2

1

0

0.001

1

10

9

8

7

10

30

20

10

0

0.1

1

40

50

75°C

25°C

TA = −25°C

75°C

25°C

TA = −25°C

75°C

25°C

TA = −25°C

0.01

35

25

15

5

0.01

0.1

30

3.5

3

2.5

100

4.5

f = 1 MHz

TA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10

VCE = 10 V

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