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ST2304SRG Datenblatt(PDF) 2 Page - Stanson Technology

Teilenummer ST2304SRG
Bauteilbeschribung  ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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Hersteller  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

ST2304SRG Datenblatt(HTML) 2 Page - Stanson Technology

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ST2304SRG
N Channel Enhancement Mode MOSFET
3.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2304SRG 2005. V1
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
ID
3.2
2.6
A
Pulsed Drain Current
IDM
10
A
Continuous Source Current (Diode Conduction)
IS
1.20
A
Power Dissipation
TA=25℃
TA=70℃
PD
1.20
0.8
W
Operation Junction Temperature
TJ
150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
100
℃/W


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