Datenblatt-Suchmaschine für elektronische Bauteile |
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ST2304SRG Datenblatt(PDF) 2 Page - Stanson Technology |
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ST2304SRG Datenblatt(HTML) 2 Page - Stanson Technology |
2 / 6 page ST2304SRG N Channel Enhancement Mode MOSFET 3.2A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2304SRG 2005. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID 3.2 2.6 A Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) IS 1.20 A Power Dissipation TA=25℃ TA=70℃ PD 1.20 0.8 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W |
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Ähnliche Beschreibung - ST2304SRG |
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