Datenblatt-Suchmaschine für elektronische Bauteile |
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STP4803 Datenblatt(PDF) 2 Page - Stanson Technology |
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STP4803 Datenblatt(HTML) 2 Page - Stanson Technology |
2 / 7 page STP4803 STP4803 STP4803 STP4803 Dual P Channel Enhancement Mode MOSFET - 5.2A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4803 2008. V1 ABSOULTE ABSOULTE ABSOULTE ABSOULTE MAXIMUM MAXIMUM MAXIMUM MAXIMUM RATINGS RATINGS RATINGS RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Parameter Parameter Parameter Symbol Symbol Symbol Symbol Typical Unit Unit Unit Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -5.2 -4.2 A Pulsed Drain Current IDM -30 A Continuous Source Current (Diode Conduction) IS -2.3 A Power Dissipation TA=25℃ TA=70℃ PD 2.7 1.8 W Operation Junction Temperature TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 ℃/W |
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