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2SC6124 Datenblatt(Datasheet) 1 Page - Toshiba Semiconductor

Teile-Nr. 2SC6124
Beschreibung  Power Amplifier Applications Power Switching Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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2SC6124
2009-10-19
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6124
Power Amplifier Applications
Power Switching Applications
Low collector emitter saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 1 A)
High-speed switching: tstg = 400 ns (typ.)
Complementary to 2SA2206
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
VCEX
160
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
7
V
DC
IC
2
A
Collector current
Pulse
ICP
4
A
Base current
IB
0.5
A
t = 10 s
2.5
Collector power dissipation
DC
PC
(Note 1)
1.0
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm
2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 : BASE
2 : COLLECTOR (HEAT SINK)
3 : EMITTER




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